Effect of Temperature on the Microstructure of Boron Nitride Formed In Situ on Chemical Vapor-Deposited Boron in Ammonia Gas
Article first published online: 28 JAN 2011
© 2011 The American Ceramic Society
Journal of the American Ceramic Society
Volume 94, Issue 3, pages 679–682, March 2011
How to Cite
Li, S., Zhang, L., Ye, F., Liu, Y., Cheng, L., Feng, Z. and Chen, L. (2011), Effect of Temperature on the Microstructure of Boron Nitride Formed In Situ on Chemical Vapor-Deposited Boron in Ammonia Gas. Journal of the American Ceramic Society, 94: 679–682. doi: 10.1111/j.1551-2916.2010.04386.x
R. Naslain—contributing editor
This work was supported by the National Natural Science Foundation of China (Nos. 90405015 and 51002120).
- Issue published online: 11 MAR 2011
- Article first published online: 28 JAN 2011
- Manuscript No. 28912. Received November 15, 2010; approved December 7, 2010.
Boron nitride thin layers are in situ fabricated on chemical vapor-deposited boron in ammonia gas. Characterization by X-ray photoelectron spectroscopy and transmission electron microscopy reveals that the nitridation is dominated by different processes with varying temperatures. Below 1300°C the surface reaction is in control and leads to the formation of uniformly thin layer with mostly sp3 boron nitride. As the temperature rises, the nitridation is gradually turned as a diffusion-determining process, after which a thicker but uneven layer with hexagonal sp2 boron nitride is produced.