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Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er3+–Yb3+–W6+ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition

Authors

  • Feng Gao,

    1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
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  • Qinyuan Zhang,

    1. Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510640, China
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  • Gangjin Ding,

    1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
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  • Ni Qin,

    1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
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  • Dinghua Bao

    Corresponding author
    1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
      †Author to whom correspondence should be addressed. e-mail: stsbdh@mail.sysu.edu.cn
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  • J. Ballato—contributing editor

  • This work was financially supported by the Natural Science Foundation of China (Nos. 50872156 and U0634006), the Natural Science Foundation of Guangdong Province, China (No. 10251027501000007), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (No. 20090171110007).

†Author to whom correspondence should be addressed. e-mail: stsbdh@mail.sysu.edu.cn

Abstract

Strong upconversion photoluminescence and large ferroelectric polarization were observed for the first time in layered structure Er3+–Yb3+–W6+ triply substituted bismuth titanate thin films. The thin films were prepared on fused silica and Pt(111)/Ti/SiO2/Si substrates by chemical solution deposition. Two green emission bands and a red one were observed in the upconversion photoluminescence spectra for all the films pumped by a 980 nm laser diode, which correspond to 2H11/2, 4S3/2, and 4F9/2 to 4I15/2 transitions of Er3+ ions, respectively. A two-photon energy-transfer process was confirmed by the power dependence of emission intensity. Compared with that of Er3+–Yb3+-substituted bismuth titanate thin films, the improved photoluminescence is related to the reduced defects such as oxygen vacancies due to B-site (Ti4+) substitution by W6+ ions, while the large ferroelectric remnant polarization can be attributed to the increased structure distortion and the reduced oxygen vacancies due to cosubstitution of A-site (Bi3+) and B-site (Ti4+) by Er3+, Yb3+, and W6+ ions, respectively. The combination of the strong upconversion photoluminescence and the good ferroelectric properties in the thin films would open the possibility of realizing novel multifunctional optoelectronic integration device applications.

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