Improving the High-Temperature Oxidation Resistance of Ti3(SiAl)C2 by Nb-Doping

Authors

  • Li-Li Zheng,

    1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039, China
    Search for more papers by this author
  • Lu-Chao Sun,

    1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039, China
    Search for more papers by this author
  • Mei-Shuan Li,

    Corresponding author
    1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
    Search for more papers by this author
  • Yan-Chun Zhou

    1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
    Search for more papers by this author
    • **Fellow, American Ceramic Society.


  • N. Jacobson—contributing editor

  • This work was supported by the National Science Foundation of China under Grant No.50771099.

†Author to whom correspondence should be addressed. e-mail: mshli@imr.ac.cn

Abstract

A (TiNb)3(SiAl)C2 solid solution was designed and synthesized to improve the high-temperature oxidation resistance of Ti3(SiAl)C2. After doping with Nb, the oxidation resistance of Ti3(SiAl)C2 is improved. Its oxidation kinetics follows parabolic behavior up to 1300°C. The oxide scale formed on (TiNb)3(SiAl)C2 is thinner and smaller in grain size than that on Ti3(SiAl)C2 under the same oxidation condition. The beneficial effect of Nb doping on the oxidation resistance of Ti3(SiAl)C2 mainly results from the decreased concentration of oxygen vacancies and titanium interstitials in the rutile form of TiO2, and the inhibited generation of excessive voids in the oxide scale.

Ancillary