This work was supported by the National Basic Research Project (No. 61363Z09.1), Shanghai Rising-Star Program (09QH1402400) and the “Hundred Talent Project” of the Chinese Academy of Sciences.
Microwave Properties of Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3 Hetero Layered Films Directly Sputtered on Si up to 50 GHz
Article first published online: 24 MAY 2011
© 2011 The American Ceramic Society
Journal of the American Ceramic Society
Volume 94, Issue 8, pages 2262–2265, August 2011
How to Cite
Yang, L., Wang, G., Dong, X., Ponchel, F., Rémiens, D. (2011), Microwave Properties of Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3 Hetero Layered Films Directly Sputtered on Si up to 50 GHz. Journal of the American Ceramic Society, 94: 2262–2265. doi: 10.1111/j.1551-2916.2011.04610.x
- Issue published online: 9 AUG 2011
- Article first published online: 24 MAY 2011
- Manuscript Accepted: 28 MAR 2011
- Manuscript Received: 23 FEB 2011
- National Basic Research Project. Grant Number: 61363Z09.1
- Shanghai Rising-Star Program. Grant Number: 09QH1402400
- “Hundred Talent Project” of the Chinese Academy of Sciences
Perovskite Ba0.6Sr0.4TiO3 (BST), pyrochlore Bi1.5Zn1.0Nb1.5O7 (BZN), and hetero layered BZN/BST films have been directly grown on high resistivity (HR)-Si substrates by radio frequency magnetron sputtering. The microwave properties (up to 50 GHz) of all the films are evaluated by fabricating coplanar waveguide configuration. Experimental results showed that the BZN layer helped in tailoring the dielectric constant and reducing the loss tangent significantly. Moreover, the resulting BZN/BST/HR-Si films show moderate permittivity (~258) and tunability (~15.63%, 200 kV/cm), and low microwave loss (~0.0175) at 2 GHz and their microwave properties (1–50 GHz) potentially could be made suitable for integrated microwave tunable devices.