Microwave Properties of Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3 Hetero Layered Films Directly Sputtered on Si up to 50 GHz


  • This work was supported by the National Basic Research Project (No. 61363Z09.1), Shanghai Rising-Star Program (09QH1402400) and the “Hundred Talent Project” of the Chinese Academy of Sciences.

Author to whom correspondence should be addressed. e-mail: xldong@sunm.shcnc.ac.cn


Perovskite Ba0.6Sr0.4TiO3 (BST), pyrochlore Bi1.5Zn1.0Nb1.5O7 (BZN), and hetero layered BZN/BST films have been directly grown on high resistivity (HR)-Si substrates by radio frequency magnetron sputtering. The microwave properties (up to 50 GHz) of all the films are evaluated by fabricating coplanar waveguide configuration. Experimental results showed that the BZN layer helped in tailoring the dielectric constant and reducing the loss tangent significantly. Moreover, the resulting BZN/BST/HR-Si films show moderate permittivity (~258) and tunability (~15.63%, 200 kV/cm), and low microwave loss (~0.0175) at 2 GHz and their microwave properties (1–50 GHz) potentially could be made suitable for integrated microwave tunable devices.