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Thermoelectric Performance of Zn and GeCo-Doped In2O3 Fine-Grained Ceramics by the Spark Plasma Sintering

Authors

  • Bo Cheng,

    1. State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing, China
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  • Hui Fang,

    1. State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing, China
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  • Jinle Lan,

    1. State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing, China
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  • Yong Liu,

    1. State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing, China
    2. School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing, China
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  • Yuan-Hua Lin,

    Corresponding author
    • State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing, China
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  • Ce-Wen Nan

    1. State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing, China
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  • This work was financially supported by the Ministry of Science & Technology of China through a 973-Project, under grant No. 2007CB607504, and also supported by the National High Technology Research and Development Program of China, under grant No. 2009AA03Z216.

Author to whom correspondence should be addressed. e-mail: linyh@mail.tsinghua.edu.cn

Abstract

Zn and Ge co-doped In2O3-based ceramics have been prepared by the spark plasma sintering (SPS) technique. Microstructure studies show that dense and fine-grained ceramic samples can be obtained at low temperature sintered by SPS, and the grain size is about 100–300 nm. These In2O3-based ceramics show higher electrical conductivity (~103 S/cm) as compared with the pure In2O3 (~50 S/cm). In addition, the samples also exhibited large power factor, especially the In1.98Zn0.01Ge0.01O3 sample ~ 7.5 × 10-4 W/mK2. The evaluated maximum ZT value is 0.20 at 973 K, which makes them promising materials to be used in thermoelectric devices.

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