This work was supported by the National Science Council under contract No. NSC 100-2221-E-006-130-MY2 and the Center for Micro/Nano Science and Technology.
Composite Mg2TiO4(111)/MgO (111) Gate Oxide on GaN (001)
Article first published online: 30 NOV 2011
© 2011 The American Ceramic Society
Journal of the American Ceramic Society
Volume 95, Issue 1, pages 45–48, January 2012
How to Cite
Hsiao, C.-Y., Wu, J.-C., Wu, H.-T., Shih, C.-F. (2012), Composite Mg2TiO4(111)/MgO (111) Gate Oxide on GaN (001). Journal of the American Ceramic Society, 95: 45–48. doi: 10.1111/j.1551-2916.2011.04947.x
- Issue published online: 3 JAN 2012
- Article first published online: 30 NOV 2011
- Manuscript Accepted: 12 OCT 2011
- Manuscript Received: 8 SEP 2011
- National Science Council. Grant Number: 100-2221-E-006-130-MY2
- Center for Micro/Nano Science and Technology
Mg2TiO4/MgO composite thin films were deposited on GaN (001) as gate oxides. The use of oxygen in sputtering and post-annealing increased the (111)-preferring orientation of Mg2TiO4 on GaN (001). Inserting MgO buffer layer slightly decreased the overall dielectric constant, but considerably improved the electrical properties by modifying the band alignment at interface. The relative permittivity, interfacial trap density, and leakage current of the composite layer-based capacitor were ~17.6, 7.4 × 1011 eV−1·cm−2, and 4.6 × 10−8A/cm2 (at −2 V), respectively, showing potential application to the GaN-based metal-oxide-semiconductor capacitor.