Fabrication and Properties of High Curie Temperature xBiZn1/2Ti1/2O3–(1−x)PbTiO3 Piezoelectric Films by a Sol–Gel Process
- Supported by National Science Fund for distinguished young scholars (Grant No. 50625204), Science Fund for Creative Research Groups (Grant No. 50921061), and by the Ministry of Sciences and Technology of China through National Basic Research Program of China (973 Program 2009CB623301), outstanding tutors for doctoral dissertations of S&T project in Beijing (No. YB20081000302), and by Tsinghua University Initiative Scientific Research Program.
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The xBiZn1/2Ti1/2O3–(1−x)PbTiO3 (BZT–PT, x = 0.1–0.3) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates via an aqueous sol–gel method. Highly (100) oriented BZT–PT films with thickness of 600 nm were obtained by introducing PbO seeding layers. Dense uniform microstructures with average grain size of about 50 nm were observed for these films. The dielectric, ferroelectric, and piezoelectric properties of the BZT–PT thin films were investigated. The curie temperature of the BZT–PT films was about 535°C for x = 0.2, and higher than 600°C for x = 0.3. The local effective piezoelectric coefficient of the (100) oriented BZT–PT films was approximately 40 pm/V for x = 0.3.