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Improved Electrical Properties and Strong Red Emission of Pr3+-Doped x K0.5Bi0.5TiO3–(1−x)Na0.5Bi0.5TiO3 Lead-Free Ferroelectric Thin Films

Authors

  • Hong Zhou,

    1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, China
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  • Guangheng Wu,

    1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, China
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  • Ni Qin,

    1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, China
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  • Dinghua Bao

    Corresponding author
    • State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, China
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Author to whom correspondence should be addressed. e-mail: stsbdh@mail.sysu.edu.cn.

Abstract

Structural, photoluminescence, dielectric, and ferroelectric properties of lead-free perovskite Pr3+-doped xK0.5Bi0.5TiO3–(1−x)Na0.5Bi0.5TiO3 (x = 0–1.0) thin films were studied. The thin films were prepared by a chemical solution deposition method combined with a rapid thermal annealing process at 700°C. We observed that the thin film with x = 0.15, corresponding to the morphotropic phase boundary in the solid solution ceramics or single crystal bulk counterparts, showed a very large dielectric constant and a high remanent polarization, as well as a strong red emission at 611 nm assigned to 1D23H4 transitions of the Pr3+ ions. In addition, this study also indicates that the morphotropic phase boundary in xK0.5Bi0.5TiO3–(1−x)Na0.5Bi0.5TiO3 thin films might be probed by photoluminescence probe of Pr3+ ions because the photoluminescence of Pr3+ ions is very sensitive to the phase structure changes.

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