Article

Deposition of Preferred-Orientation ZnO Films on the Lead-Free Ceramic Substrates and its Effects on the Properties of Surface Acoustic Wave Devices

  1. I-Hao Chan1,
  2. Jen-Chuan Chang2,
  3. Chieh-Tze Sun3,
  4. Mau-Phon Houng1,
  5. Sheng-Yuan Chu3,4,5,*

Article first published online: 6 APR 2012

DOI: 10.1111/j.1551-2916.2012.05170.x

Issue

Journal of the American Ceramic Society

Journal of the American Ceramic Society

Volume 95, Issue 7, pages 2254–2259, July 2012

Additional Information

How to Cite

Chan, I.-H., Chang, J.-C., Sun, C.-T., Houng, M.-P., Chu, S.-Y. (2012), Deposition of Preferred-Orientation ZnO Films on the Lead-Free Ceramic Substrates and its Effects on the Properties of Surface Acoustic Wave Devices. Journal of the American Ceramic Society, 95: 2254–2259. doi: 10.1111/j.1551-2916.2012.05170.x

Author Information

  1. 1

    Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

  2. 2

    Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, HsinChu, Taiwan

  3. 3

    Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

  4. 4

    Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan

  5. 5

    Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan

*Author to whom correspondence should be addressed. e-mail: chusy@mail.ncku.edu.tw

Publication History

  1. Issue published online: 5 JUL 2012
  2. Article first published online: 6 APR 2012
  3. Manuscript Accepted: 24 FEB 2012
  4. Manuscript Received: 21 OCT 2011

Funded by

  • National Science Council (NSC). Grant Number: NSC-99-2221-E-017-005
  • Ministry of Education

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A study of the structure based on the ZnO layers and NKN-SrTiO3 (NKN-ST) ceramic substrates with different sputtering conditions to deposit ZnO films is presented. Poly-crystal ZnO films with c-axis (002) orientation have been successfully grown on the NKN-ST ceramic substrates by RF magnetron sputtering technique. The deposited films were characterized as a function of oxygen-argon gas flow ratio, RF power, sputtering pressure, and depositing time. The ZnO films with strong (002) orientation are obtained under a base pressure of 20 mTorr, containing 40% oxygen and 60% argon at RF power of 60 W. Crystalline structures and surface roughness characteristics of the films were investigated by using XRD analysis, SEM, and AFM measurements. It shows that the preferred oriented ZnO film is beneficial for improving the electromechanical coupling coefficient (k2) of Surface Acoustic Wave (SAW) device. The velocity, k2, and temperature coefficient of frequency of the ZnO/IDT/NKN-ST SAW device properties are 3120 m/s, 4.20%, and −320, respectively.

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