High-Speed Epitaxial Growth of β-SiC Film on Si(111) Single Crystal by Laser Chemical Vapor Deposition

Authors


Author to whom correspondence should be addressed. e-mail: turong@imr.tohoku.ac.jp

Abstract

(111)-oriented β-SiC film was prepared on Si(111) by laser chemical vapor deposition at a laser power of 100 W, a total pressure of 200 Pa, and a deposition temperature of 1203 K. The β-SiC film grew epitaxially on the Si(111) substrate with in-plane orientation relationship of SiC [math formula]//Si [math formula] and SiC [math formula]//Si [math formula]. The deposition rate of the β-SiC film was 40 μm/h, 10 times higher than that of conventional CVD.

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