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(111)-oriented β-SiC film was prepared on Si(111) by laser chemical vapor deposition at a laser power of 100 W, a total pressure of 200 Pa, and a deposition temperature of 1203 K. The β-SiC film grew epitaxially on the Si(111) substrate with in-plane orientation relationship of SiC [inline image]//Si [inline image] and SiC [inline image]//Si [inline image]. The deposition rate of the β-SiC film was 40 μm/h, 10 times higher than that of conventional CVD.