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Enhanced Broadband 2.0 μm Emission and Energy Transfer Mechanism in HoBi Co-Doped Borophosphate Glass

Authors

  • Qiuchun Sheng,

    1. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, China
    2. Graduate School of Chinese Academy of Sciences, Beijing, China
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  • Xiaolin Wang,

    1. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, China
    2. Graduate School of Chinese Academy of Sciences, Beijing, China
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  • Danping Chen

    Corresponding author
    • Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, China
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Author to whom correspondence should be addressed. e-mail: dpchen2008@yahoo.com.cn

Abstract

A novel borophosphate glass doped with Ho2O3 and Bi2O3 has been investigated. The efficient energy transfer process between Ho3+ and bismuth ions is observed and the energy transfer efficiency is 47.8%. The enhanced broadband 2.0 μm emission with a full width at half maximum of 180 nm of Ho3+:5I75I8 is obtained by codoping Bi2O3 excited by a 445 nm laser diode. The emission properties and energy transfer mechanism of Ho3+ sensitized by bismuth ions are discussed. The results indicate that this glass is a promising candidate for 2.0 μm laser material.

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