SiC/SiC ceramic matrix composites under creep-rupture loading accumulate damage by means of local matrix cracks that typically form near a stress concentration, such as a 90° fiber tow or a large matrix pore, and grow over time. Such damage is difficult to detect through conventional techniques. This study demonstrates that electrical resistance is a viable method of monitoring and inspecting damage in SiC/SiC composites at high temperature. Both interrupted and uninterrupted creep-rupture experiments were performed at 1315°C and 110 MPa with in situ resistance measurements. A linear relationship was found between resistance and cumulative crack depth.