Hexagonal Boron Nitride as a New Ultraviolet Luminescent Material and Its Application


  • This research was partially supported by the Grants-in-Aid for Challenging Exploratory Research 22651056, Scientific Research (A)19205026, Priority Areas “Nano Materials Science for Atomic Scale Modification 474,” and World Premier International Research Center (WPI) Initiative, (MANA, NIMS). All these were provided by the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan.


Hexagonal boron nitride (hBN), which is conventionally used as one of the best-known heat-resistant materials due to its high thermal and chemical stability, has recently been found as a highly luminous material in the far-ultraviolet (FUV) region. This paper reviews the recent studies of hBN growth, optical properties, and device application development. In the case of highly pure crystals of hBN grown by the solvent growth method, the electronic excitation states near the band gap are governed by optically allowed exciton effects, which originate from the Jahn–Teller effect on the exciton series. The excitonic luminescence bands are utilized for an FUV plane light-emitting device excited by field emitters to take advantage of the highly luminous character.