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Growth and Properties of Core-Shelled SiC–SiO2 Nanowires Using Chemical Vapor Deposition

Authors

  • Kun-Hou Liao,

    1. Department of Military Meteorology Engineering, Air Force Institute of Technology, Jieshou West Road, Gangshan Townwhip, Kaohsiung County 820, Taiwan, Republic of China
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  • Wan-Yu Wu,

    1. Department of Materials Science, National University of Tainan, 33, Section 2, Shu-Lin Street, Tainan 700, Taiwan, Republic of China
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    • Current address: MingDao University, 369 Wen-Hua Road, Pettow, ChangHua 52345, Taiwan, Republic of China

  • Bol-Wen Yang,

    1. Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan, Republic of China
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  • Jyh-Ming Ting

    Corresponding author
    1. Department of Materials Science and Engineering, and the Institute of Nanotechnology and Microsytems Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan, Republic of China
      *jting@mail.ncku.edu.tw
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  • This work is supported by from NCKU Project of Promoting Academic Excellence & Developing World Class Research Centers (D97-3360) and the National Science Council in Taiwan under Grant No. NSC 98-2622-E-006-012-CC2.

*jting@mail.ncku.edu.tw

Abstract

Core-shelled SiC–SiO2 nanowires have been synthesized on mechanically scratched Si substrates using a catalyst-assisted chemical vapor reaction process at 1100°C. The average diameter and length are 30 nm and in the order of 101 μm, respectively. The SiC core exhibits a single crystalline structure, while the core is amorphous. High-resolution transmission electron microscopy images and selected area diffraction patterns show that the (111) planes of the SiC are at an angle of approximately 71° to the nanowires axis. The existence of the SiO2 alters the cathodoluminescence spectra of the SiC nanowires. A growth mechanism is also suggested.

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