Joining of Sintered Silicon Carbide Ceramics Using Sodium Borosilicate Glass as the Solder

Authors

  • Zhaohua Luo,

    1. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, People's Republic of China
    2. Graduate University of the Chinese Academy of Sciences, Beijing, People's Republic of China
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  • Dongliang Jiang,,

    Corresponding author
    • State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, People's Republic of China
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  • Jingxian Zhang,

    1. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, People's Republic of China
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  • Qingling Lin,

    1. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, People's Republic of China
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  • Zhongming Chen,

    1. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, People's Republic of China
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  • Zhengren Huang

    1. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, People's Republic of China
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dljiang@mail.sic.ac.cn

Abstract

Sodium borosilicate glass powder with the Si:B:Na molar ration of 53:44:6 has been developed and used as the solder to join sintered SiC ceramics. The coefficient of thermal expansion of the glass matches the silicon carbide substrate well at low temperature, and the wettability of the solder on SiC substrate becomes excellent above 1150°C. The 4-point bending strength of the joint reaches 218 ± 23 MPa at room temperature and the joint strength at 400°C can be kept at 154 ± 35 MPa. The microstructure, compositions, and interfacial properties were studied. Results showed that a good adhesion between SiC substrate and the solder layer was achieved.

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