The submitted manuscript has been created by Argonne National Laboratory, a U.S. Department of Energy laboratory managed by UChicago Argonne, LLC, under Contract No. DE-AC02-06CH11357 with the U.S. Department of Energy. The U.S. Government retains for itself, and others acting on its behalf, a paid-up, nonexclusive, irrevocable worldwide license in said article to reproduce, prepare derivative works, distribute copies to the public, and perform publicly and display publicly, by or on behalf of the Government.
Reaction Joining of Aluminum-Doped Lanthanum Strontium Manganese Oxide to Yttria-Stabilized Tetragonal Zirconia for Gas Sensor Applications
Article first published online: 10 APR 2012
© 2012 The American Ceramic Society
International Journal of Applied Ceramic Technology
Volume 9, Issue 4, pages 725–732, July/August 2012
How to Cite
Pappacena, K. E., Singh, D., Timofeeva, E. V. and Routbort, J. L. (2012), Reaction Joining of Aluminum-Doped Lanthanum Strontium Manganese Oxide to Yttria-Stabilized Tetragonal Zirconia for Gas Sensor Applications. International Journal of Applied Ceramic Technology, 9: 725–732. doi: 10.1111/j.1744-7402.2012.02773.x
- Issue published online: 12 JUL 2012
- Article first published online: 10 APR 2012
- U.S. Department of Energy. Grant Number: DE-AC02-06CH11357
Aluminum-doped lanthanum strontium manganese oxide (LSAM) has been investigated as an electrically conductive ceramic material. LSAM formulations with varying amounts of aluminum were synthesized using standard ceramic processing followed by pressure-less sintering in air. Electrical conductivity of LSAM was measured as a function of aluminum content and temperature. Optimum LSAM formulations were joined to yttria-stabilized tetragonal zirconia (YTZP) using a high-temperature deformation process. Electron microscopy, X-ray diffraction, and Raman spectroscopy were used to evaluate the joint interface. Joining was attributed to the formation of a reaction layer of strontium zirconate. Joining of LSAM to oxygen-ion conducting YTZP has implications in using this approach as interconnect for variety of high-temperature applications, including fuel cells and gas sensors.