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Low Vacuum Deposition of Aluminum Nitride Thin Films by Sputtering



Conventionally, sputtering deposition of thin films requires a low base pressure (high vacuum) to minimize influences of residual gases. Here, a high base pressure (low vacuum) was used, which can reduce significantly the overall processing time. Aluminum nitride ( AlN ) was selected as a model system of dielectric nitrides. All the analyses revealed that the obtained films under a low vacuum environment within specific processing windows exhibited characteristics similar to those of high-vacuum made AlN films. Such a low vacuum deposition technique takes advantages of kinetically favorable formation of the nitride films and hence, has great potentials in many more technological applications.

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