Influence of Seed Layers on the Vertical Growth of ZnO Nanowires by Low-Temperature Wet Chemical Bath Deposition on ITO-Coated Glass Substrate

Authors

  • F. Dehghan Nayeri,

    Corresponding author
    1. Thin Film Laboratory and Nano-Electronics, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Islamic Republic of Iran
    • F. Dehghan Nayeri, Thin Film Laboratory and Nano-Electronics, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Islamic Republic of Iran Email: f.d.nayeri@ut.ac.ir

    Search for more papers by this author
  • E. Asl Soleimani

    1. Thin Film Laboratory and Nano-Electronics, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Islamic Republic of Iran
    Search for more papers by this author

Abstract

Aligned ZnO nanowires (NWs) were synthesized by low-temperature wet chemical bath deposition (CBD) technique on indium tin oxide (ITO)-coated glass substrates using c-axis orientated ZnO and AZO (Al-doped ZnO) seed layers through the RF sputtering deposition process under different conditions. The growth direction of ZnO NW was controlled by using the two different seed layers. Results showed single-crystalline structure of the ZnO NWs with the highest peak intensity in (002) crystalline direction. In addition, NWs seeding form AZO layer, grown on ITO coated glass, were vertically aligned and uniformly distributed on the substrate. The effects of precursor concentration, growth temperature, and seed layer on NW morphology were investigated in two different seed layers systematically. The intensity of broad emissions at 500–600 nm emission was observed in room temperature photoluminescence (PL) spectra for samples prepared under optimized parameters. In addition, the green emission intensity of ZnO NWs growth on the ZnO seed layer was much weaker than that of AZO seed layer. The experimental results indicate that the selection of seed layers, precursor concentration, and the growth temperature are key parameters to vertical growth of NWs for the application of nanoscale devices.

Ancillary