Dip-Pen Lithography of BiFeO3 Nanodots

Authors

  • Inhwa Jung,

    1. Department of Mechanical Engineering, Kyung Hee University, Giheung-Gu, Yongin-Si, Korea
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  • Jong Yeog Son

    Corresponding author
    1. Department of Applied Physics, College of Applied Science, Kyung Hee University, Giheung-Gu, Yongin-Si, Korea
    • Department of Mechanical Engineering, Kyung Hee University, Giheung-Gu, Yongin-Si, Korea
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Author to whom correspondence should be addressed. e-mail: jyson@khu.ac.kr

Abstract

We demonstrate the dip-pen nanolithography (DPN) process of BiFeO3 nanodots forming a nanodot at any desired position. The BiFeO3 nanodots exhibited a size increment from 30 to 180 nm for the deposition time between 0.1 and 10 s. This position-controlled DPN using a silicon nitride cantilever produced an array of the ferroelectric nanodots with a minimum lateral dimension of about 30 nm on a Nb-doped SrTiO3 substrate. We further confirmed canonical ferroelectric responses of the minimum-sized nanodot using piezoelectric force microscopy.

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