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Mixed Network Effect of Broadband Near-Infrared Emission in Bi-Doped B2O3-GeO2 Glasses

Authors

  • Na Zhang,

    1. State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou, China
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  • Sharafudeen K. N.,

    1. State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou, China
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  • Guoping Dong,

    1. State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou, China
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  • Mingying Peng,

    1. State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou, China
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  • Jianrong Qiu

    Corresponding author
    • State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou, China
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Author to whom correspondence should be addressed. e-mail: qjr@scut.edu.cn

Abstract

We report on the mixed network effect of broadband near-infrared (NIR) emission of Bi-doped borogermanate glasses. On excitation with 808 nm laser diode (LD) radiation, the fluorescence emission intensity at 1235 nm with a full width at half maximum (FWHM) of about 200 nm was found to vary with B2O3 content, which agrees well with the variation tendency of the absorption intensity at 500 and 700 nm. The peak position and the intensity of the NIR emission depend strongly on the excitation wavelength. Two kinds of bismuth centers are proposed to coexist in the Bi-doped borogermanate glasses: Bi0 and Bi+, which contribute to the NIR emissions at 1240 and 1095 nm, respectively.

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