Fellow, The American Ceramic Society.
Strengthening of Ti3(Si, Al)C2 by Doping with Tungsten
Article first published online: 9 NOV 2012
© 2012 The American Ceramic Society
Journal of the American Ceramic Society
Volume 95, Issue 12, pages 3726–3728, December 2012
How to Cite
Zheng, L. Y., Wang, J. Y., Chen, J. X., Zhou, Y. C. (2012), Strengthening of Ti3(Si, Al)C2 by Doping with Tungsten. Journal of the American Ceramic Society, 95: 3726–3728. doi: 10.1111/jace.12050
- Issue published online: 5 DEC 2012
- Article first published online: 9 NOV 2012
- Manuscript Accepted: 24 SEP 2012
- Manuscript Received: 28 JUN 2012
- National Outstanding Young Scientist Foundation. Grant Number: 59 925 208
- Natural Science Foundation of China. Grant Numbers: 50 232 040, 50 302 011, 50 772 114, 50 832 008
- Chinese Academy of Sciences
Improving the high-temperature strength and stiffness of Ti3SiC2 is the task of many investigations. However, methods for high-temperature strengthening have not been established although various ways are applicable to enhance the room-temperature mechanical properties of Ti3SiC2. In this work, we report that significant strengthening was realized at both room and high temperatures by incorporating a small amount of W into Ti3(Si, Al)C2. The onsite temperature for the rapid degradation of stiffness and strength moved more than 150°C upward to over 1200°C. The flexural strength of 5 at.% W-doped Ti3(Si, Al)C2 is 632.9 MPa at RT and 285 MPa at 1200°C, being 176% and 170% of those for baseline material, respectively.