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Strengthening of Ti3(Si, Al)C2 by Doping with Tungsten

Authors

  • Liya Y. Zheng,

    1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
    2. Graduate School of Chinese Academy of Sciences, Beijing, China
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  • Jingyang Y. Wang,

    1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
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  • Jixin X. Chen,

    1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
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  • Yanchun C. Zhou

    Corresponding author
    1. Science and Technology of Functional Laboratory, ARIMPT, Beijing, China
    • Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
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    • Fellow, The American Ceramic Society.

Author to whom correspondence should be addressed. e-mail: yczhou714@gmail.com

Abstract

Improving the high-temperature strength and stiffness of Ti3SiC2 is the task of many investigations. However, methods for high-temperature strengthening have not been established although various ways are applicable to enhance the room-temperature mechanical properties of Ti3SiC2. In this work, we report that significant strengthening was realized at both room and high temperatures by incorporating a small amount of W into Ti3(Si, Al)C2. The onsite temperature for the rapid degradation of stiffness and strength moved more than 150°C upward to over 1200°C. The flexural strength of 5 at.% W-doped Ti3(Si, Al)C2 is 632.9 MPa at RT and 285 MPa at 1200°C, being 176% and 170% of those for baseline material, respectively.

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