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Electrical Conduction and Dielectric Properties of the Rb-doped CaCu3Ti4O12

Authors

  • Zhi Yang,

    1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, China
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  • Yue Zhang,

    Corresponding author
    1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
    • Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, China
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  • Zhihong Lu,

    1. School of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan, China
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  • Kun Zhang,

    1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, China
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  • Rui Xiong,

    Corresponding author
    1. Key Laboratory for the Green Preparation and Application of Functional Materials of Ministry of Education, Hubei University, Wuhan, China
    • Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, China
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  • Jing Shi

    1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, China
    2. Key Laboratory for the Green Preparation and Application of Functional Materials of Ministry of Education, Hubei University, Wuhan, China
    3. International Center for Materials Physics, Shen Yang, China
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Authors to whom correspondence should be addressed. e-mails: yue-zhang@hust.edu.cn and xiongrui1967@163.com

Abstract

Ca1−xRbxCu3Ti4O12 (= 0, 0.03, and 0.05) ceramics were synthesized by the sol-gel method. Their microstructure and electrical properties were investigated. In the Rb-doped samples, the Cu-rich and Ti-poor grain-boundary layers are formed, and electrical properties are also changed by doping: With the increase in doping concentration, the grain resistivity and the grain-boundary Schottky potential barrier are changed, the grain-boundary resistivity is enhanced, and the low-frequency dielectric constants and loss are reduced. These results were discussed in terms of the internal barrier layer capacitor (IBLC) mechanism, particularly focusing on the electrical properties in grains and the cationic nonstoichiometry at grain boundaries.

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