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Low Dielectric Loss and Good Dielectric Thermal Stability of xNd(Zn1/2Ti1/2)O3–(1−x)Ba0.6Sr0.4TiO3 Thin Films Fabricated by Sol–Gel Method

Authors

  • Xiaohua Sun,

    Corresponding author
    1. School of Physics, College of Chemistry and Molecular Science, Wuhan University, Wuhan, China
    • School of Mechanical and Material Engineering, Research Institute for New Energy, China Three Gorges University, Yichang, China
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  • Ying Yang,

    1. School of Mechanical and Material Engineering, Research Institute for New Energy, China Three Gorges University, Yichang, China
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  • Qiaoling Zhang,

    1. School of Mechanical and Material Engineering, Research Institute for New Energy, China Three Gorges University, Yichang, China
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  • Shuang Hou,

    1. School of Mechanical and Material Engineering, Research Institute for New Energy, China Three Gorges University, Yichang, China
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  • Caihua Huang,

    1. School of Mechanical and Material Engineering, Research Institute for New Energy, China Three Gorges University, Yichang, China
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  • Zongzhi Hu,

    1. School of Mechanical and Material Engineering, Research Institute for New Energy, China Three Gorges University, Yichang, China
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  • Jun Zou,

    1. School of Mechanical and Material Engineering, Research Institute for New Energy, China Three Gorges University, Yichang, China
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  • Meiya Li,

    1. School of Physics, College of Chemistry and Molecular Science, Wuhan University, Wuhan, China
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  • Tianyou Peng,

    1. School of Physics, College of Chemistry and Molecular Science, Wuhan University, Wuhan, China
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  • Xing-zhong Zhao

    Corresponding author
    1. School of Physics, College of Chemistry and Molecular Science, Wuhan University, Wuhan, China
    • School of Mechanical and Material Engineering, Research Institute for New Energy, China Three Gorges University, Yichang, China
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Author to whom correspondence should be addressed. e-mail: mksxh@yahoo.com.cn and xzzhao@whu.edu.cn

Abstract

xNd(Zn1/2Ti1/2)O3–(1−x)Ba0.6Sr0.4TiO3 (xNZT–BST) thin films were fabricated on Pt/Ti/SiO2/Si substrates by sol–gel method with = 0, 3%, 6%, and 10%. The structures, surface morphology, dielectric and ferroelectric properties, and thermal stability of xNZT–BST thin films were investigated as a function of NZT content. It was observed that the introduction of NZT into BST decreased grain size, dielectric constant, ferroelectricity, tunability, and significantly improved dielectric loss and dielectric thermal stability. The corresponding reasons were discussed. The 10%NZT–BST thin film exhibited the least dielectric loss of 0.005 and the lowest temperature coefficient of permittivity (TCP) of 3.2 × 10−3/°C. In addition, the figure of merit (FOM) of xNZT–BST (x = 3%, 6%, and 10%) films was higher than that of pure BST film. Our results showed that the introduction of appropriate NZT into BST could modify the dielectric quality of BST thin films with good thermal stability. Especially for the 3%NZT–BST thin film, it showed the highest FOM of 33.58 for its appropriate tunability of 32.87% and low dielectric loss of 0.0098.

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