Low Temperature Deposition of High Performance Lead Strontium Titanate Thin Films by in situ RF Magnetron Sputtering

Authors

  • Kui Li,

    1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
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  • Xianlin Dong,

    1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
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  • Denis Rémiens,

    1. Institute of Electronics, Microelectronics and Nanotechnology (IEMN) - DOAE, UMR CNRS 8520, Villeneuve-d'Ascq Cedex, France
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  • Xiuyun Lei,

    1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
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  • Tao Li,

    1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
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  • Gang Du,

    1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
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  • Genshui Wang

    Corresponding author
    • Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
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Author to whom correspondence should be addressed. e-mail: genshuiwang@mail.sic.ac.cn.

Abstract

Highly (100) oriented lead strontium titanate (Pb0.4Sr0.6TiO3) thin films were deposited on LaNiO3 -coated Si substrate via radio-frequency magnetron sputtering method with substrate temperature ranging from 300 to 500°C. The PST thin films were crystallized at a temperature as low as 300°C, which may result from the well-controlled stoichiometry and the in situ crystallization on seed layer. At an electric field of 400 kV/cm, high tunability of 43% and 57% can be achieved for PST films deposited at 300°C and 500°C, respectively. Moreover, the dielectric response shows weak frequency dependence and the loss factor stays relatively low. The results suggest that such films should be promising candidate for the microwave tunable devices compatible with the current Si technology.

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