Influence of Crystallization on the Conversion of Sm3+Sm2+ in SrOBi2O3K2OB2O3 Glass-Ceramics

Authors

  • Donglei Wei,

    1. College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, China
    2. Department of Physics, Pukyong National University, Pusan, Korea
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  • Beiling Yuan,

    1. College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, China
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  • Yanlin Huang,

    1. College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, China
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  • Taiju Tsuboi,

    Corresponding author
    1. Faculty of Engineering, Kyoto Sangyo University, Kyoto, Japan
    • College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, China
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  • Hyo Jin Seo

    Corresponding author
    1. Department of Physics, Pukyong National University, Pusan, Korea
    • College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, China
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Authors to whom correspondence should be addressed. e-mails: hjseo@pknu.ac.kr and tsuboi@cc.kyoto-su.ac.jp

Abstract

Sm3+-doped glass 13SrO–2Bi2O3–5K2O–80B2O3 was fabricated by the conventional melt-quenching technique. The glass-ceramics were obtained by heating the as-prepared glasses in air atmosphere at selected temperatures 550°C, 600°C, 615°C, and 650°C, respectively. The luminescence spectra of both Sm3+ and Sm2+ were detected in the ceramic heated at 650°C where crystalline phase is formed. The as-prepared glass and the ceramics heated at 550°C, 600°C, and 615°C show only the emission due to Sm3+. In the sample heated at 650°C in air atmosphere, however, part of Sm3+ ions was converted to Sm2+, giving rise to sharp emission lines which are characteristic of Sm2+ in crystalline state. It is suggested that Sm2+ ions are located at Sr2+ site in the ceramic while Sm3+ ions are located at Bi3+ sites. The Sm2+-doped glass-ceramic has a high optical stability because the fluorescence intensity decreases by only about 8% of its initial value upon excitation at 488 nm Ar+ laser.

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