High Tunability in (111)-Oriented Relaxor Pb0.8Ba0.2ZrO3 Thin Film with Antiferroelectric and Ferroelectric Two-Phase Coexistence

Authors

  • Biaolin Peng,

    1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, China
    2. Department of Manufacturing and Materials, Cranfield University, Cranfield, Bedfordshire, UK
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  • Huiqing Fan,

    Corresponding author
    • State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, China
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  • Qi Zhang

    Corresponding author
    1. Department of Manufacturing and Materials, Cranfield University, Cranfield, Bedfordshire, UK
    • State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, China
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Authors to whom correspondence should be addressed. e-mails: hqfan3@163.com and q.zhang@cranfield.ac.uk

Abstract

Using a sol-gel method Pb0.8Ba0.2ZrO3 (PBZ) thin film with a thickness of ~320 nm was fabricated on Pt(111)/TiOx/SiO2/Si substrate. The analysis results of XRD, SEM, and dielectric properties revealed that this thin film is a (111)-oriented nano-scaled antiferroelectric and ferroelectric two-phase coexisted relaxor. Calculations of dielectric tunability (η) and figure-of-merit (FOM) at room temperature display a maximum value of 75% at E = 560 kV/cm and ~236, respectively. High-temperature stability (η > 75% and FOM > 230 at 560 kV/cm in the range from 300 to 380 K) and high breakdown dielectric strength (leakage current < 1 nA at 598 kV/cm) make the PBZ thin film to be an attractive material for applications of tunable devices.

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