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Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique


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TiCx films were deposited by atomic layer deposition using tetrakis–neopentyl–titanium [Ti(CH2C(CH3)3)4] and H2 plasma as the precursor and reactant, respectively. The growth of the rock-salt–structured TiCx films was confirmed by X-ray and electron diffraction. The C-to-Ti ratio determined by Rutherford backscattering spectrometry was ~0.52 and the film resistivity was as low as ~600 μΩ cm with a high density of 4.41 g/cm3. The step coverage was approximately 90% over the trench structure (top opening diameter of 25 nm) with an aspect ratio of ~4.5.

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