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Luminescence and Structural Properties of High Stable SiN-Doped BaMgAl10O17:Eu2+ Phosphors Synthesized by a Mechanochemical Activation Route

Authors

  • Yi-Fei Wang,

    1. CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, China
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  • Yi-Fei Wang,

    1. CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, China
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  • Qiang-Qiang Zhu,

    1. CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, China
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  • Lu-Yuan Hao,

    1. CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, China
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  • Xin Xu,

    Corresponding author
    • CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, China
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  • Rong-Jun Xie,

    1. Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan
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  • Simeon Agathopoulos

    1. Materials Science and Engineering Department, University of Ioannina, Ioannina, Greece
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Author to whom correspondence should be addressed. e-mail: xuxin@ustc.edu.cn

Abstract

Highly thermal stable SiN-doped BAM (BaMgAl10O17: Eu2+) phosphors have been successfully synthesized by a mechanochemically assisted solid-state reaction method. Mechanical milling greatly improved the amount of SiN pairs substituted for AlO pairs in BAM lattice>. SiN incorporation improves the photoluminescence (PL) properties and the color purity, reduces the thermal quenching, and most importantly, increases the thermal stability of the BAM phosphors significantly. The interpretation of the positive influence of SiN doping was attributed to the local structure of the produced phosphors, which was analyzed with the aid of first-principles density functional calculations. This analysis showed that the substitution of AlO pairs with SiN pairs should preferentially occur in the boundary between the spinel layer and the conduction layer of the BAM phosphor, leading to a compression of the conduction layer. Eu2+ ions prefer to substitute the N-coordinated Ba2+ ions in the lattice of SiN-doped BAM phosphors, leading to a strong EuN bonding. The results of these calculations agree fairly well with the results recorded experimentally, specifically the electron paramagnetic resonance (EPR) spectra, the X-ray absorption fine structure (XAFS), thermoluminescence spectra (TL), and decay behaviors.

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