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Crystallographic Orientation Dependence on Electrical Properties of (Bi, Na)TiO3-based Thin Films
Article first published online: 13 AUG 2013
© 2013 The American Ceramic Society
Journal of the American Ceramic Society
Volume 96, Issue 11, pages 3530–3535, November 2013
How to Cite
Ding, R., Wang, D., Chu, D., Li, S. (2013), Crystallographic Orientation Dependence on Electrical Properties of (Bi, Na)TiO3-based Thin Films. Journal of the American Ceramic Society, 96: 3530–3535. doi: 10.1111/jace.12524
- Issue published online: 11 NOV 2013
- Article first published online: 13 AUG 2013
- Manuscript Accepted: 30 JUN 2013
- Manuscript Received: 18 OCT 2012
- Australian Research Council Discovery Project. Grant Number: DP110104629
- Faculty of Science Grant, University of New South Wales. Grant Number: IR001/PS27207
Orientation-engineered (La, Ce) cosubstituted 0.94(Bi0.5Na0.5)TiO3–0.06BaTiO3 thin films were epitaxially deposited on CaRuO3 buffered (LaAlO3)0.3(Sr2AlTaO6)0.35 single-crystal substrates by pulsed laser deposition. The ferroelectric, piezoelectric, dielectric, and leakage current characteristics of the thin films were significantly affected by the crystallographic orientation. We found that the (001)-oriented film exhibited the best ferroelectric properties with remnant polarization Pr = 29.5 μC/cm2 and coercive field Ec = 7.4 kV/mm, whereas the (111)-oriented film demonstrated the largest piezoelectric response and dielectric permittivity. The bipolar resistive switching behavior, which is predominantly attributed to a combined effect of ferroelectric switching and formation/rupture of conductive filaments, was observed. The conduction mechanisms were determined to be ohmic conduction and Poole–Frenkel emission at high- and low-resistance states, respectively, in all the films.