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High-Speed Preparation of <111>- and <110>-Oriented β-SiC Films by Laser Chemical Vapor Deposition



Highly oriented <111> and <110> β-SiC films were prepared on Si(100) single crystal substrates by laser chemical vapor deposition using a diode laser (wavelength = 808 nm) and HMDS (Si(CH3)3Si(CH3)3) as a precursor. The effects of laser power (PL), total pressure (Ptot), and deposition temperature (Tdep) on the orientation, microstructure, and deposition rate (Rdep) were investigated. The orientation of the β-SiC films changed from <111> to random to <110> with increasing PL and Ptot. The <111>-, randomly, and <110>-oriented β-SiC films exhibited dense, cauliflower-like, and cone-like microstructures, respectively. Stacking faults were observed in the <111>- and <110>-oriented films, and aligned parallel to the (111) plane in the <111>-oriented film, whereas they were perpendicular to the (110) plane in the <110>-oriented film. The highest Rdep of the <111>-oriented β-SiC film was 200 μm/h at Ptot = 200 Pa and Tdep = 1420 K, whereas that of the <110>-oriented film was 3600 μm/h at Ptot = 600 Pa and Tdep = 1605 K.

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