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Marcus Hopfeld, Rolf Grieseler, Thomas Kups, Marcus Wilke and Peter Schaaf Thin Film Synthesis of Ti3SiC2 by Rapid Thermal Processing of Magnetron-Sputtered Ti[BOND]C[BOND]Si Multilayer Systems Advanced Engineering Materials 15

Version of Record online: 18 OCT 2012 | DOI: 10.1002/adem.201200180

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Thin film synthesis of Mn+1AXn phases, which combine metallic and ceramic properties, especially Ti3SiC2, need temperatures in the range of 800–1000 °C. The reduction of temperature influence to the substrate and the processing time of the formation of polycrystalline Ti3SiC2 is possible by adapting the rapid thermal processing technique to magnetron sputtered multilayer films of Ti, C and Si.

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