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J. Veres, S.D. Ogier, S.W. Leeming, D.C. Cupertino and S. Mohialdin Khaffaf Low-k Insulators as the Choice of Dielectrics in Organic Field-Effect Transistors Advanced Functional Materials 13

Version of Record online: 7 MAR 2003 | DOI: 10.1002/adfm.200390030

Gate insulators in organic field-effect transistors (FETs) may influence not just the morphology of the semiconductor, but also the electronic states at the interface. Localized states may be distorted by random interface dipoles and their distribution broadened (see Figure and cover). In this communication it is shown that by using low-k materials as insulators, mobility can be increased and hysteresis reduced, and the underlying physics is discussed.

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