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L. A. Majewski, R. Schroeder and M. Grell Low-Voltage, High-Performance Organic Field-Effect Transistors with an Ultra-Thin TiO2 Layer as Gate Insulator Advanced Functional Materials 15

Version of Record online: 27 MAY 2005 | DOI: 10.1002/adfm.200400570

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Solution-based anodization of titanium offers the possibility of exceptionally cheap manufacture of high-quality, ultra-thin TiO2 films on plastic substrates. In conjunction with organic semiconductors, such thin films can be employed to produce transistors operating well below 1 V. The simplicity of the process (see Figure) makes the commercialization and integration of these devices in inexpensive, disposable, flexible, and mobile products possible.

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