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Y. M. Sun, Y. Q. Ma, Y. Q. Liu, Y. Y. Lin, Z. Y. Wang, Y. Wang, C. A. Di, K. Xiao, X. M. Chen, W. F. Qiu, B. Zhang, G. Yu, W. P. Hu and D. B. Zhu High-Performance and Stable Organic Thin-Film Transistors Based on Fused Thiophenes Advanced Functional Materials 16

Version of Record online: 22 DEC 2005 | DOI: 10.1002/adfm.200500547

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A series of new organic semiconductors for organic thin-film transistors using dithieno[3,2-b:2′,3′-d]thiophene as the core are synthesized (see Figure). The compounds exhibit excellent field-effect performances, with a high mobility of 0.42 cm2 V–1 s–1 and an on/off ratio of 5 × 106. Devices based on phenyl-substituted compounds (e.g., 2) have excellent thermal stability and high environmental stability.

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