J. C. Pinto, G. L. Whiting, S. Khodabakhsh, L. Torre, A. Rodríguez, R. M. Dalgliesh, A. M. Higgins, J. W. Andreasen, M. M. Nielsen, M. Geoghegan, W. T. S. Huck and H. Sirringhaus Organic Thin Film Transistors with Polymer Brush Gate Dielectrics Synthesized by Atom Transfer Radical Polymerization Advanced Functional Materials 18
Version of Record online: 18 DEC 2007 | DOI: 10.1002/adfm.200700540
Low voltage organic field-effect transistors with ultrathin polymer brush gate insulators are demonstrated. The brushes are fabricated with atom transfer radical polymerization (ATRP), allowing tight control of thickness and uniformity. This demonstrates the possibility that fully saturating short channel transistors can be produced with polymer gate insulators.
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