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Hongtao Yuan, Hidekazu Shimotani, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki and Yoshihiro Iwasa High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids Advanced Functional Materials 19

Version of Record online: 18 FEB 2009 | DOI: 10.1002/adfm.200801633

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Ultra-high-density charge accumulation in an ionic-liquid-gated ZnO field-effect transistor is reported to increase the maximum attainable carrier density for tuning electronic states in semiconductors. The ionic liquid dielectric, with a supercooling property, is found to have charge accumulation capability even at low temperature, reaching an ultra-high carrier density of 8×1014 cm−2 at 220 K and 5.5×1014 cm−2 at 1.8 K.

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