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Xiaoyang Cheng, Yong-Young Noh, Jianpu Wang, Marta Tello, Johannes Frisch, Ralf-Peter Blum, Antje Vollmer, Jürgen P. Rabe, Norbert Koch and Henning Sirringhaus Controlling Electron and Hole Charge Injection in Ambipolar Organic Field-Effect Transistors by Self-Assembled Monolayers Advanced Functional Materials 19

Article first published online: 1 JUL 2009 | DOI: 10.1002/adfm.200900315

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SAM modification in ambipolar transistors is able to improve both electron and hole injection. The results reported here show that gold electrodes modified by 1DT exhibit improved contact resistance for both electrons and holes compared to O2 plasma-treated gold electrodes. The origin of this unexpected behavior is investigated in terms of SAM-induced change of work-function, film thickness, interfacial tunneling resistance and interfacial electronic and molecular structure.

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