Joseph A. Letizia, Jonathan Rivnay, Antonio Facchetti, Mark A. Ratner and Tobin J. Marks Variable Temperature Mobility Analysis of n-Channel, p-Channel, and Ambipolar Organic Field-Effect Transistors Advanced Functional Materials 20
The temperature dependence of field-effect-transistor mobility is analyzed for a series of n-channel, p-channel, and ambipolar organic semiconductors. Fits of the effective mobility (µeff) data within a multiple trapping and release model reveal activation energies from 21 to 70 meV. Calculated free carrier mobilities (µ0) are ∼0.2–0.8 cm2 V−1 s−1 in this materials set, largely independent of µeff.
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