Mark-Jan Spijkman, Jakob J. Brondijk, Tom C. T. Geuns, Edsger C. P. Smits, Tobias Cramer, Francesco Zerbetto, Pablo Stoliar, Fabio Biscarini, Paul W. M. Blom and Dago M. de Leeuw Dual-Gate Organic Field-Effect Transistors as Potentiometric Sensors in Aqueous Solution Advanced Functional Materials 20
Version of Record online: 25 FEB 2010 | DOI: 10.1002/adfm.200901830
Dual-gate transducers are fabricated with buried electrodes to eliminate Faradaic leakage currents. The transducers are potentiometric sensors where the detection relies on measuring a shift in threshold voltage caused by changes in the electrochemical potential at the second gate dielectric. The sensitivity is enhanced over conventional ion-sensitive field-effect transistors by adjusting the ratio of the top and bottom gate capacitances.
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