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Michael C. Gwinner, Yana Vaynzof, Kulbinder K. Banger, Peter K. H. Ho, Richard H. Friend and Henning Sirringhaus Solution-Processed Zinc Oxide as High-Performance Air-Stable Electron Injector in Organic Ambipolar Light-Emitting Field-Effect Transistors Advanced Functional Materials 20

Article first published online: 23 AUG 2010 | DOI: 10.1002/adfm.201000785

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Electron injectionin organic field-effect transistors (OFETs) is approached in a novel way. Modification of gold electrodes with a solution-deposited and patterned zinc oxide (ZnO) layer allows unstable low-work-function metals to be avoided. Ambipolar light-emitting OFETs based on poly(9,9-dioctylfluorene-alt-benzothiadiazole) and poly(9,9-dioctylfluorene) with electron-injecting gold/ZnO and hole-injecting gold electrodes show substantially lower electron threshold voltages and higher currents than devices with bare gold.

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