E-mail

E-mail a Wiley Online Library Link

Michael C. Gwinner, Yana Vaynzof, Kulbinder K. Banger, Peter K. H. Ho, Richard H. Friend and Henning Sirringhaus Solution-Processed Zinc Oxide as High-Performance Air-Stable Electron Injector in Organic Ambipolar Light-Emitting Field-Effect Transistors Advanced Functional Materials 20

Article first published online: 23 AUG 2010 | DOI: 10.1002/adfm.201000785

Thumbnail image of graphical abstract

Electron injectionin organic field-effect transistors (OFETs) is approached in a novel way. Modification of gold electrodes with a solution-deposited and patterned zinc oxide (ZnO) layer allows unstable low-work-function metals to be avoided. Ambipolar light-emitting OFETs based on poly(9,9-dioctylfluorene-alt-benzothiadiazole) and poly(9,9-dioctylfluorene) with electron-injecting gold/ZnO and hole-injecting gold electrodes show substantially lower electron threshold voltages and higher currents than devices with bare gold.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field

Choose captcha format: Image or Audio. Click here if you need help.

SEARCH