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Spyros N. Yannopoulos, Angeliki Siokou, Nektarios K. Nasikas, Vassilios Dracopoulos, Fotini Ravani and George N. Papatheodorou CO2-Laser-Induced Growth of Epitaxial Graphene on 6H-SiC(0001) Advanced Functional Materials 22

Version of Record online: 4 NOV 2011 | DOI: 10.1002/adfm.201101413

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A novel method for the fast, one-step growth of large-area, homogeneous, high-quality epitaxial graphene on SiC(0001) is presented. An infrared CO2 laser (10.6 μm) is used as the heating source enabling in situ patterning. A number of experimental techniques, such as scanning electron microscopy, X-ray photoelectron spectroscopy, depth profiling methods, and Raman spectroscopy, is employed to present an in-depth analysis of the quantitative and qualitative features of the EG grown by the current method.

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