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Fabiola Liscio, Silvia Milita, Cristiano Albonetti, Pasquale D'Angelo, Antonietta Guagliardi, Norberto Masciocchi, Raffaele Guido Della Valle, Elisabetta Venuti, Aldo Brillante and Fabio Biscarini Structure and Morphology of PDI8-CN2 for n-Type Thin-Film Transistors Advanced Functional Materials 22

Version of Record online: 20 DEC 2011 | DOI: 10.1002/adfm.201101640

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A multiscale investigation of N, N′-bis(n- octyl)-x:y,dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2) shows the same molecular arrangement in the bulk and in thin films sublimated on SiO2/Si wafers. A complete structural determination and morphological studies disclose the growth mechanisms occurring at different deposition temperatures, which appear to be highly correlated with the trend of the electrical parameters that are measured in PDI8-CN2-based field-effect transistors.

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