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Kevin A. McComber, Xiaoman Duan, Jifeng Liu, Jurgen Michel and Lionel C. Kimerling Single-Crystal Germanium Growth on Amorphous Silicon Advanced Functional Materials 22

Version of Record online: 21 DEC 2011 | DOI: 10.1002/adfm.201102015

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A method for the growth of single-crystal germanium on amorphous silicon by ultrahigh vacuum chemical vapor deposition at temperatures not exceeding 450 °C is presented. Growths proceed through constrictive channels and emerge with improved properties compared to as-deposited germanium. A description is given of the growth mechanism and its implications for design of the growth structure.

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