E-mail

E-mail a Wiley Online Library Link

Kevin A. McComber, Xiaoman Duan, Jifeng Liu, Jurgen Michel and Lionel C. Kimerling Single-Crystal Germanium Growth on Amorphous Silicon Advanced Functional Materials 22

Version of Record online: 21 DEC 2011 | DOI: 10.1002/adfm.201102015

Thumbnail image of graphical abstract

A method for the growth of single-crystal germanium on amorphous silicon by ultrahigh vacuum chemical vapor deposition at temperatures not exceeding 450 °C is presented. Growths proceed through constrictive channels and emerge with improved properties compared to as-deposited germanium. A description is given of the growth mechanism and its implications for design of the growth structure.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field

SEARCH