E-mail a Wiley Online Library Link

Rinaldo Trotta, Antonio Polimeni and Mario Capizzi Hydrogen Incorporation in III-N-V Semiconductors: From Macroscopic to Nanometer Control of the Materials’ Physical Properties Advanced Functional Materials 22

Version of Record online: 16 MAR 2012 | DOI: 10.1002/adfm.201102053

Thumbnail image of graphical abstract

The remarkable consequences of hydrogen irradiation on the electronic, structural, optical, and electrical properties of GaAsN are exploited to specifically create artificial heterostructures for different applications. The highly trapping-limited diffusion of H atoms in dilute nitrides allows for the modulation of the material properties in the growth plane, thus allowing for fabrication of site-controlled quantum dots, engineering of the strain field, and patterning of the electrical resistance.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field