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Sunghun Lee, Jeong-Hwan Lee, Jae-Hyun Lee and Jang-Joo Kim The Mechanism of Charge Generation in Charge-Generation Units Composed of p-Doped Hole-Transporting Layer/HATCN/n-Doped Electron-Transporting Layers Advanced Functional Materials 22

Version of Record online: 16 DEC 2011 | DOI: 10.1002/adfm.201102212

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The rate limiting step of charge generation in the charge-generation units (CGUs) composed of a p-doped hole-transporting layer (HTL)/1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HATCN)/n-doped electron-transporting layer (ETL) is reported. Energy level alignment and the current density–voltage characteristics of the structure show that the electron injection at the HATCN/n-ETL junction limits the charge generation in the CGUs.

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