Yiheng Qin, Daniël H. Turkenburg, Ionut Barbu, Wiljan T. T. Smaal, Kris Myny, Wan-Yu Lin, Gerwin H. Gelinck, Paul Heremans, Johan Liu and Erwin R. Meinders Organic Thin-Film Transistors with Anodized Gate Dielectric Patterned by Self-Aligned Embossing on Flexible Substrates Advanced Functional Materials 22
A self-aligned multi-level embossing patterning method for manufacturing bottom-gate, bottom-contact thin-film transistors on flexible substrates is demonstrated. The low temperature processed metal-insulator-metal stack includes an optimized defect-free, flat, and uniform gate dielectric layer based on aluminum anodization. Electrical measurements exhibit promising transfer characteristics of the devices, proving the feasibility of this technique.
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