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Yoon Cheol Bae, Ah Rahm Lee, Ja Bin Lee, Ja Hyun Koo, Kyung Cheol Kwon, Jea Gun Park, Hyun Sik Im and Jin Pyo Hong Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks Advanced Functional Materials 22

Version of Record online: 21 DEC 2011 | DOI: 10.1002/adfm.201102362

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A novel binary oxide-based triple-layer framework for complementary resistive switching is developed with anti-serially merged two bilayer homojunction switching elements. The oxidation/redox reaction induced by movable oxygen ions at the interface between the middle TiOy and the top/bottom TiOx layers plays a key role in the resistive switching, together with the formation of filamentary paths under bias.

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