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Bhola N. Pal, Istvan Robel, Aditya Mohite, Rawiwan Laocharoensuk, Donald J. Werder and Victor I. Klimov High-Sensitivity p–n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots Advanced Functional Materials 22

Version of Record online: 13 FEB 2012 | DOI: 10.1002/adfm.201102532

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A schematic structure of a p–n junction photodiode, which comprises a nearly fully depleted p-type layer of PbS nanocrystal quantum dots and an n-type layer of ZnO nanoparticles, is shown. This device architecture allows us to significantly reduce noise current and obtain high detectivity of more than 1012 cm Hz1/2 W−1.

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