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Bob C. Schroeder, Zhenggang Huang, Raja Shahid Ashraf, Jeremy Smith, Pasquale D'Angelo, Scott E. Watkins, Thomas D. Anthopoulos, James R. Durrant and Iain McCulloch Silaindacenodithiophene-Based Low Band Gap Polymers – The Effect of Fluorine Substitution on Device Performances and Film Morphologies Advanced Functional Materials 22

Article first published online: 6 FEB 2012 | DOI: 10.1002/adfm.201102941

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Fluorine is introduced into silaindacenodithiophene based semiconducting polymers with the aim to improve the photovoltaic as well as the charge carrier properties. The influence of the thienyl spacers and fluorine atoms on molecular packing and active layer morphology of the new polymers is investigated with regard to device performance.

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